Quantitative AES analysis and preferential sputtering of titanium silicide thin filmsPALACIO, C.Surface and interface analysis. 1999, Vol 27, Num 12, pp 1092-1097, issn 0142-2421Article

Condiciones y desafíos del quehacer teológico universitario en América Latina : ¿ qué lugar y qué función para la teología hoy ? = Conditions and Challenges of the Academic Theological Work in Latin AmericaPALACIO, C.Teología y vida. 1995, Vol 36, Num 3, pp 193-202, issn 0049-3449Article

THE OXIDATION OF POLYCRYSTALLINE TANTALUM AT LOW PRESSURES AND LOW TEMPERATURES = OXYDATION DU TANTALE POLYCRISTALLIN A FAIBLE PRESSION ET BASSE TEMPERATUREPALACIO C; MARTINEZ DUART JM.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 90; NO 1; PP. 63-67; BIBL. 10 REF.Conference Paper

RESPONSE FUNCTION OF VELOCITY ANALYSERS.PALACIO C; SALMERON M; MARTINEZ DUART JM et al.1977; J. PHYS. E; G.B.; DA. 1977; VOL. 10; NO 1; PP. 61-66Article

Formation of the Si/Ti interfacePALACIO, C; ARRANZ, A.Applied surface science. 2007, Vol 253, Num 9, pp 4283-4288, issn 0169-4332, 6 p.Article

Nanoscale reactive ion beam mixing of Ti/Si and Si/Ti interfacesARRANZ, A; PALACIO, C.Thin solid films. 2007, Vol 515, Num 7-8, pp 3426-3433, issn 0040-6090, 8 p.Article

Nanoscale ion-beam mixing of Ti/Si interfaces : An X-ray photoelectron spectroscopy and factor analysis studyPALACIO, C; ARRANZ, A.Surface science. 2005, Vol 578, Num 1-3, pp 71-79, issn 0039-6028, 9 p.Article

Chromium silicide formation by argon irradiation of Cr/Si bilayersPALACIO, C; ARRANZ, A.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 3, issn 0022-3727, 035301.1-035301.6Article

Synthesis of Ti-Cr-N thin films by reactive ion-beam mixing of Ti/Cr interfacesPALACIO, C; ARRANZ, A.Surface science. 2006, Vol 600, Num 11, pp 2385-2391, issn 0039-6028, 7 p.Article

Composition of tantalum nitride thin films grown by low-energy nitrogen implantation : a factor analysis study of the Ta 4f XPS core levelARRANZ, A; PALACIO, C.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 7, pp 1405-1410, issn 0947-8396, 6 p.Article

Tantalum nitride formation by low-energy (0.5-5 keV) nitrogen implantationARRANZ, A; PALACIO, C.Surface and interface analysis. 2000, Vol 29, Num 10, pp 653-658, issn 0142-2421Article

Iron deposition on polycrystalline aluminium : composition and nanostructure of the interfaceARRANZ, A; PALACIO, C.Surface and interface analysis. 2000, Vol 29, Num 6, pp 392-398, issn 0142-2421Article

Characterization of the surface and interface species formed during the oxidation of aluminumARRANZ, A; PALACIO, C.Surface science. 1996, Vol 355, Num 1-3, pp 203-213, issn 0039-6028Article

The formation of V-AI-N thin films by reactive ion beam mixing of V/AIinterfacesARRANZ, A; PALACIO, C.Applied physics. A, Materials science & processing (Print). 2009, Vol 97, Num 1, pp 217-224, issn 0947-8396, 8 p.Article

Reactive ion beam mixing of V/Si interfaces by low energy N⁺2 bombardmentPALACIO, C; ARRANZ, A.Surface science. 2008, Vol 602, Num 10, pp 1826-1829, issn 0039-6028, 4 p.Article

Spectroscopic characterization of the surface nanostructure of Ti during deposition on polycrystalline aluminiumPALACIO, C; ARRANZ, A.Surface and interface analysis. 1999, Vol 27, Num 9, pp 871-879, issn 0142-2421Article

Screening effects in the Ti 2p core level spectra of Ti-based ternary nitridesARRANZ, A; PALACIO, C.Surface science. 2006, Vol 600, Num 12, pp 2510-2517, issn 0039-6028, 8 p.Article

Mixed Ti―O―Si oxide films formation by oxidation of titanium―silicon interfacesBENITO, N; PALACIO, C.Applied surface science. 2014, Vol 301, pp 436-441, issn 0169-4332, 6 p.Article

The room temperature growth of Ti on sputter-cleaned Si(100) : Composition and nanostructure of the interfaceARRANZ, A; PALACIO, C.Surface science. 2005, Vol 588, Num 1-3, pp 92-100, issn 0039-6028, 9 p.Article

N₂₃-core losses and autoionization emissions of clean and oxygen exposed zirconium = Pertes de cœur N₂₃ et émissions d'autoionisation du zirconium propre et exposé à l'oxygèneSANZ, J. M; PALACIO, C.Solid state communications. 1987, Vol 64, Num 2, pp 189-192, issn 0038-1098Article

The application of ITTFA and ARXPS to study the ion beam mixing of metal/Si bilayersPALACIO, C; ARRANZ, A.Surface and interface analysis. 2008, Vol 40, Num 3-4, pp 676-682, issn 0142-2421, 7 p.Conference Paper

Factor analysis, a useful tool for solving analytical problems in AES and XPS : a study of the performances and limitations of the indicator functionARRANZ, A; PALACIO, C.Surface and interface analysis. 1994, Vol 22, Num 1-12, pp 93-97, issn 0142-2421Conference Paper

Role of fluorine atoms in the oxidation-hydrolysis process of plasma assisted chemical vapor deposition fluorinated silicon nitride filmSANCHEZ, O; GOMEZ-ALEIXANDRE, C; PALACIO, C et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 1, pp 66-69, issn 1071-1023Article

On the features associated with M₂₃VV Auger transitions of Cr and Fe: a comment on «oxidation of NiCr and NiCrFe alloys at room temperature by J. Steffen and S. Hofmann = Caractéristiques associées avec les transitions Auger M₂₃VV du chrome et du fer: un commentaire sur l'oxydation des alliages NiCr et NiCrFe à la température ambiante par J. Steffen et S. HofmannPALACIO, C; STEFFEN, J; HOFMANN, S et al.Surface and interface analysis. 1989, Vol 14, Num 3, pp 158-160, issn 0142-2421Article

Surface characterization of Ti-Si-C-ON coatings for orthopedic devices: XPS and Raman spectroscopyOLIVEIRA, Cristina; ESCOBAR GALINDO, R; PALACIO, C et al.Solid state sciences. 2011, Vol 13, Num 1, pp 95-100, issn 1293-2558, 6 p.Article